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Total: 3 records, 1 pages
Search For: gallium arsenide high electron mobility transistor
Global Gallium Arsenide High Electron Mobility Transistor Market 2024 by Manufacturers, Regions, Type and Application, Forecast to 2030
02 Jan 2024
Electronics & Semiconductor
Gallium Arsenide High Electron Mobility Transistor
According to our (Global Info Research) latest study, the global Gallium Arsenide High Electron Mobility Transistor market size was valued at USD million in 2023 and is forecast to a readjusted size of USD million by 2030 with a CAGR of % during review period.
USD3480.00
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Global Gallium Arsenide High Electron Mobility Transistor Market 2023 by Manufacturers, Regions, Type and Application, Forecast to 2029
26 Feb 2023
Electronics & Semiconductor
Gallium Arsenide High Electron Mobility Transistor
Gallium arsenide high electron mobility transistors are heterojunction field effect devices developed on the basis of gallium arsenide metal semiconductor field effect transistors. The device type is determined by factors such as the height of the Schottky barrier, the thickness of the barrier layer, and the doping concentration of the device. Under the zero-volt gate voltage of the enhanced device, the source-drain current is pinched off. As the gate voltage changes to the positive voltage, the source-drain current gradually increases; while for the depletion-type device, the source-drain current is turned on under the zero-volt gate voltage. As the gate voltage changes to a negative voltage, the source leakage current gradually decreases until it is cut off.
USD3480.00
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Global Gallium Arsenide High Electron Mobility Transistor Supply, Demand and Key Producers, 2023-2029
03 Feb 2023
Electronics & Semiconductor
Gallium Arsenide High Electron Mobility Transistor
The global Gallium Arsenide High Electron Mobility Transistor market size is expected to reach $ million by 2029, rising at a market growth of % CAGR during the forecast period (2023-2029).
USD4480.00
Add To Cart
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Search For: gallium arsenide high electron mobility transistor
Total: 3 records, 1 pages
According to our (Global Info Research) latest study, the global Gallium Arsenide High Electron Mobility Transistor market size was valued at USD million in 2023 and is forecast to a readjusted size of USD million by 2030 with a CAGR of % during review period.
USD3480.00
Add To Cart
Gallium arsenide high electron mobility transistors are heterojunction field effect devices developed on the basis of gallium arsenide metal semiconductor field effect transistors. The device type is determined by factors such as the height of the Schottky barrier, the thickness of the barrier layer, and the doping concentration of the device. Under the zero-volt gate voltage of the enhanced device, the source-drain current is pinched off. As the gate voltage changes to the positive voltage, the source-drain current gradually increases; while for the depletion-type device, the source-drain current is turned on under the zero-volt gate voltage. As the gate voltage changes to a negative voltage, the source leakage current gradually decreases until it is cut off.
USD3480.00
Add To Cart
The global Gallium Arsenide High Electron Mobility Transistor market size is expected to reach $ million by 2029, rising at a market growth of % CAGR during the forecast period (2023-2029).
USD4480.00
Add To Cart
Popular Product Keywords
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Our Clients
What We Can Provide?
With better results and higher quality products,Our professional reports can achieve four things:
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Insight into the industry market information
-
Analyze market development needs
-
Prospects for future development
-
Develop industry investment strategy
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