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According to our (Global Info Research) latest study, the global WBG Semiconductor market size was valued at US$ 2453 million in 2024 and is forecast to a readjusted size of USD 14030 million by 2031 with a CAGR of 26.9% during review period.

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The global WBG Semiconductor market size is expected to reach $ 14030 million by 2031, rising at a market growth of 26.9% CAGR during the forecast period (2025-2031).

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According to our (Global Info Research) latest study, the global WBG Semiconductor Material (SiC-GaN) market size was valued at US$ million in 2024 and is forecast to a readjusted size of USD million by 2031 with a CAGR of %during review period.

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The global Wide Bandgap Power (WBG) Semiconductor Devices market size is expected to reach $ 14030 million by 2031, rising at a market growth of 26.9% CAGR during the forecast period (2025-2031).

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According to our (Global Info Research) latest study, the global Wide Bandgap Power (WBG) Semiconductor Devices market size was valued at US$ 2453 million in 2024 and is forecast to a readjusted size of USD 14030 million by 2031 with a CAGR of 26.9% during review period.

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The global Wide Bandgap Power (WBG) Semiconductor Power Devices and Modules market size is expected to reach $ 14030 million by 2031, rising at a market growth of 26.9% CAGR during the forecast period (2025-2031).

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According to our (Global Info Research) latest study, the global Wide Bandgap Power (WBG) Semiconductor Power Devices and Modules market size was valued at US$ 2453 million in 2024 and is forecast to a readjusted size of USD 14030 million by 2031 with a CAGR of 26.9% during review period.

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According to our (Global Info Research) latest study, the global WBG Semiconductor market size was valued at USD 938.5 million in 2023 and is forecast to a readjusted size of USD 2680.3 million by 2030 with a CAGR of 16.2% during review period.

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According to our (Global Info Research) latest study, the global WBG Semiconductor Material (SiC-GaN) market size was valued at USD million in 2023 and is forecast to a readjusted size of USD million by 2030 with a CAGR of % during review period.

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Wide band semiconductor materials are semiconductor materials with a band width of 2.3eV and above, typically silicon carbide (SiC) and gallium nitride (GaN). Broadband semiconductor materials generally have much higher critical avalanche breakdown electric field strength and carrier saturation drift rate, higher thermal conductivity and carrier mobility than silicon, therefore, power electronic devices based on broadband semiconductor materials (such as silicon carbide) will have much higher tolerance to high voltage, much lower through-state resistance, better thermal conductivity and thermal stability, and stronger resistance to high temperatures and radiation, and many aspects of performance are improved by orders of magnitude.

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