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Total: 6 records, 1 pages

Global Automotive IGBT Discretes Supply, Demand and Key Producers, 2024-2030

date 03 Mar 2024

date Electronics & Semiconductor

new_biaoQian Automotive IGBT Discretes

The global Automotive IGBT Discretes market size is expected to reach $ million by 2030, rising at a market growth of % CAGR during the forecast period (2024-2030).

USD4480.00

Add To Cart

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Global Automotive IGBT Discretes Market 2024 by Manufacturers, Regions, Type and Application, Forecast to 2030

date 09 Jan 2024

date Electronics & Semiconductor

new_biaoQian Automotive IGBT Discretes

According to our (Global Info Research) latest study, the global Automotive IGBT Discretes market size was valued at USD million in 2023 and is forecast to a readjusted size of USD million by 2030 with a CAGR of % during review period.

USD3480.00

Add To Cart

Add To Cart

Global Automotive IGBT Discretes Market 2023 by Manufacturers, Regions, Type and Application, Forecast to 2029

date 05 Sep 2023

date Electronics & Semiconductor

new_biaoQian Automotive IGBT Discretes

According to our (Global Info Research) latest study, the global Automotive IGBT Discretes market size was valued at USD million in 2022 and is forecast to a readjusted size of USD million by 2029 with a CAGR of % during review period.

USD3480.00

Add To Cart

Add To Cart

Global Automotive IGBT Discretes Supply, Demand and Key Producers, 2023-2029

date 05 Sep 2023

date Electronics & Semiconductor

new_biaoQian Automotive IGBT Discretes

The global Automotive IGBT Discretes market size is expected to reach $ million by 2029, rising at a market growth of % CAGR during the forecast period (2023-2029).

USD4480.00

Add To Cart

Add To Cart

Global Automotive IGBT Discretes Market 2022 by Manufacturers, Regions, Type and Application, Forecast to 2028

date 30 Oct 2022

date Electronics & Semiconductor

new_biaoQian automotive igbt discretes

Insulated gate bipolar transistor (IGBT) is a compound full-controlled voltage-driven semiconductor power device composed of bipolar transistor (BJT) and MOSFET. It combines the high input impedance of MOSFET and the low of bipolar transistor (BJT).

USD3480.00

Add To Cart

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Global Automotive IGBT Discretes Production, Demand and Key Producers, 2022-2028

date 30 Oct 2022

date Electronics & Semiconductor

new_biaoQian automotive igbt discretes production demand producers

Insulated gate bipolar transistor (IGBT) is a compound full-controlled voltage-driven semiconductor power device composed of bipolar transistor (BJT) and MOSFET. It combines the high input impedance of MOSFET and the low of bipolar transistor (BJT).

USD4480.00

Add To Cart

Add To Cart

industry 03 Mar 2024

industry Electronics & Semiconductor

new_biaoQian Automotive IGBT Discretes

The global Automotive IGBT Discretes market size is expected to reach $ million by 2030, rising at a market growth of % CAGR during the forecast period (2024-2030).

USD4480.00

addToCart

Add To Cart

industry 09 Jan 2024

industry Electronics & Semiconductor

new_biaoQian Automotive IGBT Discretes

According to our (Global Info Research) latest study, the global Automotive IGBT Discretes market size was valued at USD million in 2023 and is forecast to a readjusted size of USD million by 2030 with a CAGR of % during review period.

USD3480.00

addToCart

Add To Cart

industry 05 Sep 2023

industry Electronics & Semiconductor

new_biaoQian Automotive IGBT Discretes

According to our (Global Info Research) latest study, the global Automotive IGBT Discretes market size was valued at USD million in 2022 and is forecast to a readjusted size of USD million by 2029 with a CAGR of % during review period.

USD3480.00

addToCart

Add To Cart

industry 05 Sep 2023

industry Electronics & Semiconductor

new_biaoQian Automotive IGBT Discretes

The global Automotive IGBT Discretes market size is expected to reach $ million by 2029, rising at a market growth of % CAGR during the forecast period (2023-2029).

USD4480.00

addToCart

Add To Cart

industry 30 Oct 2022

industry Electronics & Semiconductor

new_biaoQian automotive igbt discretes

Insulated gate bipolar transistor (IGBT) is a compound full-controlled voltage-driven semiconductor power device composed of bipolar transistor (BJT) and MOSFET. It combines the high input impedance of MOSFET and the low of bipolar transistor (BJT).

USD3480.00

addToCart

Add To Cart

industry 30 Oct 2022

industry Electronics & Semiconductor

new_biaoQian automotive igbt discretes production demand producers

Insulated gate bipolar transistor (IGBT) is a compound full-controlled voltage-driven semiconductor power device composed of bipolar transistor (BJT) and MOSFET. It combines the high input impedance of MOSFET and the low of bipolar transistor (BJT).

USD4480.00

addToCart

Add To Cart