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Total: 5 records, 1 pages

Global Wafer Laser Annealing Equipment Market 2024 by Manufacturers, Regions, Type and Application, Forecast to 2030

date 11 Jan 2024

date Machinery & Equipment

new_biaoQian Wafer Laser Annealing Equipment

According to our (Global Info Research) latest study, the global Wafer Laser Annealing Equipment market size was valued at USD million in 2023 and is forecast to a readjusted size of USD million by 2030 with a CAGR of % during review period.

USD3480.00

Add To Cart

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Global Wafer Laser Annealing Equipment Supply, Demand and Key Producers, 2023-2029

date 09 Feb 2023

date Machinery & Equipment

new_biaoQian Wafer Laser Annealing Equipment

The global Wafer Laser Annealing Equipment market size is expected to reach $ million by 2029, rising at a market growth of % CAGR during the forecast period (2023-2029).

USD4480.00

Add To Cart

Add To Cart

Global Wafer Laser Annealing Equipment Market 2023 by Manufacturers, Regions, Type and Application, Forecast to 2029

date 07 Jan 2023

date Machinery & Equipment

new_biaoQian Wafer Laser Annealing Equipment

After the wafer has been implanted with extremely shallow original impurity ions, laser instantaneous annealing is used to activate the impurities, and the peak depth of the implanted ions is precisely controlled to ensure that the implanted impurities do not undergo obvious diffusion and redistribution, and obtain qualified ultra-shallow junction source and drain regions.

USD3480.00

Add To Cart

Add To Cart

Global Wafer Laser Annealing Equipment Market 2022 by Manufacturers, Regions, Type and Application, Forecast to 2028

date 20 Sep 2022

date Machinery & Equipment

new_biaoQian wafer laser annealing equipment

After the wafer has been implanted with extremely shallow original impurity ions, laser instantaneous annealing is used to activate the impurities, and the peak depth of the implanted ions is precisely controlled to ensure that the implanted impurities do not undergo obvious diffusion and redistribution, and obtain qualified ultra-shallow junction source and drain regions.

USD3480.00

Add To Cart

Add To Cart

Global Wafer Laser Annealing Equipment Production, Demand and Key Producers, 2022-2028

date 20 Sep 2022

date Machinery & Equipment

new_biaoQian wafer laser annealing equipment production demand producers

After the wafer has been implanted with extremely shallow original impurity ions, laser instantaneous annealing is used to activate the impurities, and the peak depth of the implanted ions is precisely controlled to ensure that the implanted impurities do not undergo obvious diffusion and redistribution, and obtain qualified ultra-shallow junction source and drain regions.

USD4480.00

Add To Cart

Add To Cart

industry 11 Jan 2024

industry Machinery & Equipment

new_biaoQian Wafer Laser Annealing Equipment

According to our (Global Info Research) latest study, the global Wafer Laser Annealing Equipment market size was valued at USD million in 2023 and is forecast to a readjusted size of USD million by 2030 with a CAGR of % during review period.

USD3480.00

addToCart

Add To Cart

industry 09 Feb 2023

industry Machinery & Equipment

new_biaoQian Wafer Laser Annealing Equipment

The global Wafer Laser Annealing Equipment market size is expected to reach $ million by 2029, rising at a market growth of % CAGR during the forecast period (2023-2029).

USD4480.00

addToCart

Add To Cart

industry 07 Jan 2023

industry Machinery & Equipment

new_biaoQian Wafer Laser Annealing Equipment

After the wafer has been implanted with extremely shallow original impurity ions, laser instantaneous annealing is used to activate the impurities, and the peak depth of the implanted ions is precisely controlled to ensure that the implanted impurities do not undergo obvious diffusion and redistribution, and obtain qualified ultra-shallow junction source and drain regions.

USD3480.00

addToCart

Add To Cart

industry 20 Sep 2022

industry Machinery & Equipment

new_biaoQian wafer laser annealing equipment

After the wafer has been implanted with extremely shallow original impurity ions, laser instantaneous annealing is used to activate the impurities, and the peak depth of the implanted ions is precisely controlled to ensure that the implanted impurities do not undergo obvious diffusion and redistribution, and obtain qualified ultra-shallow junction source and drain regions.

USD3480.00

addToCart

Add To Cart

After the wafer has been implanted with extremely shallow original impurity ions, laser instantaneous annealing is used to activate the impurities, and the peak depth of the implanted ions is precisely controlled to ensure that the implanted impurities do not undergo obvious diffusion and redistribution, and obtain qualified ultra-shallow junction source and drain regions.

USD4480.00

addToCart

Add To Cart